PART |
Description |
Maker |
TC55257BFL-10L TC55257BFL-85 TC55257BPL-10 TC55257 |
85ns; V(dd/in): -0.3 to 7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM (TC55257xxx) SILICON GATE CMOS 32768 WORD X 8 BIT STATIC RAM SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM 硅栅CMOS 32768字8位静态RAM
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TOSHIBA[Toshiba Semiconductor] Toshiba Corporation Toshiba, Corp.
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TC51832 |
Silicon Gate CMOS / 32768 word x 8 Bit CMOS Pseudo Static RAM
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Toshiba
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TC55V11601FT-15 |
16,777,216-WORD BY 1-BIT CMOS STATIC RAM MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
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Toshiba Semiconductor
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TC55V8512FTI-15 TC55V8512JI-15 TC55V8512FTI-12 TC5 |
524,288-WORD BY 16-BIT CMOS STATIC RAM TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
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TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
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KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM 524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA 512Kx8 bit CMOS static RAM, 100ns, low power 512Kx8 bit CMOS static RAM, 70ns, low power
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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TC55VBM316AFTN TC55VBM316AFTN40 TC55VBM316AFTN55 T |
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
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TOSHIBA[Toshiba Semiconductor]
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TC55V4366FF-150 TC55V4366FF-133 TC55V4366FF-167 |
131,072-WORD BY 36-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 东芝马鞍山数字集成电路硅栅CMOS
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Toshiba Semiconductor Toshiba Corporation Toshiba, Corp.
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KM684000 KIM684000L-8L KIM684000-10 KIM684000-5 KI |
512Kx8 bit CMOS static RAM, 85ns, low power 512Kx8 bit CMOS static RAM, 100ns, low power 524/ 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM PT 16C 16#16 PIN PLUG 524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 52488字8位高速CMOS静态RAM
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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STK22C48 STK22C48N25 STK22C48N35 STK22C48N35I STK2 |
2K x 8 AutoStore?/a> nvSRAM QuantumTrap?/a> CMOS Nonvolatile Static RAM 2K x 8 AutoStore nvSRAM QuantumTrap CMOS Nonvolatile Static RAM 2K x 8 AutoStore⑩ nvSRAM QuantumTrap⑩ CMOS Nonvolatile Static RAM 2K X 8 AUTOSTORE⒙ NVSRAM QUANTUMTRAP⒙ CMOS NONVOLATILE STATIC RAM
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List of Unclassifed Manufacturers ETC[ETC]
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IDT71V428YS10YYYG IDT71V428YS10YYYGI IDT71V428S10Y |
3.3V CMOS Static RAM 4 Meg (1M x 4-Bit) 3.3V 1M x 4 Static RAM Center Pwr & Gnd Pinout
|
Integrated Device Techn... IDT[Integrated Device Technology]
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MSM521218 |
65,536-Word ?18-Bit CMOS STATIC RAM(64k瀛??8浣????AM) 65,536-Word x 18-Bit CMOS STATIC RAM From old datasheet system 65,536-Word ×18-Bit CMOS STATIC RAM(64k字8位静态RAM) 65,536字18位的CMOS静态RAM4K的字× 18位静态RAM)的
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OKI SEMICONDUCTOR CO., LTD.
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IS61C512 IS61C512-15J IS61C512-15JI IS61C512-15NI |
ASYNCHRONOUS STATIC RAM 64K X 8 HIGH-SPEED CMOS STATIC RAM
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ICSI[Integrated Circuit Solution Inc]
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